2018-07-25

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

John AndersMathieu BenoitSaverio BracciniRaimon CasanovaHucheng ChenKai ChenFrancesco Armando di BelloArmin FehrDidier FerrereDean ForshawTobias GollingSergio Gonzalez-SevillaGiuseppe IacobucciMoritz KiehnFrancesco LanniHongbin LiuLingxin MengClaudia MerlassinoAntonio MiucciMarzio NessiIvan PerićMarco RimoldiD M S SultanMateus Vincente Barreto PintoEva VilellaMichele WeberWeihao WuLailin XuEttore Zaffaroni

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文献摘要

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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2018-07-25

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

所有作者

文献摘要

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

文献摘要

讨论

|讲解博客

|AI智能校验

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

文献摘要

讨论

|讲解博客

|AI智能校验

讲解博客

AI智能校验

讲解博客

AI智能校验