Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS${}_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS${}_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS${}_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.