We report the influence of 6 MeV Zr irradiation and post-irradiation annealing (200 {\deg}C) in the in-field dependences of the critical current densities J of 1.3 m thick GdBaCuO coated conductors grown by co-evaporation. Samples were irradiated with 6 MeV Zr and fluences between 2.3x10 cm and 3x10 cm. The correlation between the superconducting critical temperature T and in-field dependences of critical current densities J has been analyzed. In addition, random disorder introduced by irradiation was reduced by thermal annealed at 200 {\deg}C. The analysis of our experimental findings indicates that the optimal irradiation (reducing random disorder by annealing) results in the suppression of the self-field J of 10 and in-field J enhancements nearly doubled at about 5 T. A clear correlation between T, disorder and self-field J is observed. Additional random disorder and nanoclusters suppress systematically T and increase the flux creep relaxation at intermediate temperatures (reducing the characteristic glassy value).

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