Giant, anomalous piezo-impedance of silicon-on-insulator

A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $\omega$, and consists of both a piezoresistance (PZR) and piezocapacitance whose maximum values are ${\pi }_R=-1100\times {10}^{-11}$ Pa${}^{-1}$ and ${\pi }_C=-900\times {10}^{-11}$ Pa${}^{-1}$ respectively. These values should be compared with the usual bulk PZR in p-type silicon, $\pi_R= 70 \times 10^{-11}$Pa$^{-1}$. The observations are well described using models of space charge limited electron and hole currents in the presence of fast electronic traps having stress-dependent capture (${\omega }_c$) and emission rates. Under steady-state conditions (i.e. when $\omega \ll {\omega }_c$) where the impedance spectroscopy measurements yield results that are directly comparable with previously published reports of PZR in depleted, silicon nano-objects, the overall piezo-response is just the usual, bulk silicon PZR. Anomalous PZR is observed only under non-steady-state conditions when $\omega \approx \omega_c$, with a symmetry suggesting that the electro-mechanically active fast traps are native Pb${}_0$ interface defects. The observations suggest new functionalities for FD-SOI, and shed light on the debate over the PZR of carrier depleted nano-silicon.