Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A${}_3$B${}_5$ heterostructures.