Highly selective dry etching of GaP in the presence of Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al $_{x}$ Ga $_{1 - x}$ P). Utilizing mixtures of silicon tetrachloride (SiCl $_{4}$ ) and sulfur hexafluoride (SF $_{6}$ ), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm/min. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl $_{4}$ to SF $_{6}$ . The process enables the use of thin Al $_{x}$ Ga $_{1 - x}$ P stop layers even at aluminum contents of a few percent.

Highly selective dry etching of GaP in the presence of Al $_{x}$ Ga $_{1 - x}$ P

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Highly selective dry etching of GaP in the presence of Al $_{x}$ Ga $_{1 - x}$ P

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Highly selective dry etching of GaP in the presence of Alxx​Ga1−x1−x​P

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Highly selective dry etching of GaP in the presence of Alxx​Ga1−x1−x​P

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Highly selective dry etching of GaP in the presence of Al $_{x}$ Ga $_{1 - x}$ P

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Highly selective dry etching of GaP in the presence of Al $_{x}$ Ga $_{1 - x}$ P

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