Effective model for $A_{2g}$ Raman signal in URu$_2$Si$_2$

We propose an effective model to describe the $A_{2 g}$ signal in Raman scattering experiments in the URu $_{2}$ Si $_{2}$ compound. We follow the scheme proposed earlier by Khveshchenko and Wiegmann [Phys. Rev. Lett. 73, 500 (1994)] to calculate the $A_{2 g}$ scattering vertex. We extract the imaginary part of a two-point current-current correlation function and compare it directly with the Raman response. We obtain an inelastic peak at $A_{2 g}$ channel owing to the interplay between a local staggered ordering and a possible quantum spin liquid behavior. Our results offer an explanation for the electronic Raman scattering experiments at the hidden order phase in URu $_{2}$ Si $_{2}$ compound [Phys. Rev. Lett. 113, 266405 (2014)].

Effective model for $A_{2 g}$ Raman signal in URu $_{2}$ Si $_{2}$

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Effective model for $A_{2 g}$ Raman signal in URu $_{2}$ Si $_{2}$

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Effective model for A2gA2g​ Raman signal in URu22​Si22​

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Effective model for A2gA2g​ Raman signal in URu22​Si22​

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Effective model for $A_{2 g}$ Raman signal in URu $_{2}$ Si $_{2}$

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Effective model for $A_{2 g}$ Raman signal in URu $_{2}$ Si $_{2}$

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