Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7\times {10}^{16}$ cm${}^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm${}^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $\sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5–3.1 MV cm${}^{-1}$.