High resolution structural characterisation of laser-induced defect clusters inside diamond

Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides and defects within diamond. We present a transmission electron microscopy (TEM) study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy (EELS) indicates that the majority of the irradiated region remains as $s{p}^3$ bonded diamond. Electrically-conductive paths are attributed to the formation of multiple nano-scale, $s{p}^2$-bonded graphitic wires and a network of strain-relieving micro-cracks.