Characterization of Traps at Nitrided SiO${}_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

The effects of nitridation on the density of traps at SiO${}_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.