Optimal doping of the diode current interrupters

An analytical solution to the problem of decreasing the energy losses $\mathrm{\Omega }$ in diode current interrupters during recovery of the blocking ability by optimizing dopant distribution $N(x)$ over structure thickness has been obtained. It was found the distribution $N(x)$ close to optimal one that decreases $\mathrm{\Omega }$ by 30-55% compared with standard interrupters with uniformly doped high-resistivity layers.