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The dispersed fluorescence following pulsed dye laser excitation of the band of a cold sample of SiO has been recorded and analyzed. The branching ratios for $_2 \Sigma^+ (v=0) \rightarrow ^2 \Sigma^+(v)_2 \Sigma^+ (v=0) \rightarrow ^2 \Pi_i(v)$ emission were determined and compared with values predicted based upon existing experimental and theoretical data. The experimentally determined branching ratios show that the $_2 \Sigma^+ (v=0) \rightarrow ^2 \Sigma^+(v)$ transitions are somewhat less diagonal than predicted. The implications for laser cooling of a trapped sample of SiO using broadband laser excitation are discussed.

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