Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb$_x$Bi$_2$Se$_3$ via penetration depth measurements

The low-temperature variation of the London penetration depth $λ (T)$ in the candidate topological superconductor Nb $_{x}$ Bi $_{2}$ Se $_{3}$ (x = 0.25) is reported for several crystals. The measurements were carried out by means of a tunnel-diode oscillator (TDO) technique in both field orientations ($H_{rf} \parallel$ $c$ and $H_{r f} ∥$ $a b$ planes). All samples exhibited power law behavior at low temperatures ( $Δ λ \sim T^{2}$ ) clearly indicating the presence of point nodes in the superconducting order parameter. The results presented here are consistent with a nematic odd-parity spin-triplet $E_{u}$ pairing state in Nb $_{x}$ Bi $_{2}$ Se $_{3}$ .

Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb $_{x}$ Bi $_{2}$ Se $_{3}$ via penetration depth measurements

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Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb $_{x}$ Bi $_{2}$ Se $_{3}$ via penetration depth measurements

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Evidence of nodes in the order parameter of the superconducting doped topological insulator Nbxx​Bi22​Se33​ via penetration depth measurements

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Evidence of nodes in the order parameter of the superconducting doped topological insulator Nbxx​Bi22​Se33​ via penetration depth measurements

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Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb $_{x}$ Bi $_{2}$ Se $_{3}$ via penetration depth measurements

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Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb $_{x}$ Bi $_{2}$ Se $_{3}$ via penetration depth measurements

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