Magnetic flux disorder and superconductor-insulator transition in nanohole thin films

We study the superconductor-insulator transition in nanohole ultrathin films in a transverse magnetic field by numerical simulation of a Josephson-junction array model. Geometrical disorder due to the random location of nanoholes in the film corresponds to random flux in the array model. Monte Carlo simulation in the path-integral representation is used to determine the critical behavior and the universal resistivity at the transition as a function of disorder and average number of flux quanta per cell, $f_o$. The resistivity increases with disorder for noninteger $f_o$ while it decreases for integer $f_o$, and reaches a common constant value in a vortex-glass regime above a critical value of the flux disorder $D_f^c$. The estimate of $D_f^c$ and the resistivity increase for noninteger $f_o$ are consistent with recent experiments on ultrathin superconducting films with positional disordered nanoholes.