Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

In this work we present silicon process compatible, stable and reliable ($>{10}^8$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$),highspeed($<60ns$)lowoperatingvoltage($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays.