We have observed a metal-insulator transition of a quasi-two dimensional electronic system in transition metal dichalcogenide -TaSe caused by doping iron. The sheet resistance of -FeTaSe ($0 \leq x \leq 0.12010^6x$ at the lowest temperature. We investigated the temperature dependence of the resistance and found a metal-insulator transition with a critical sheet resistance k. The critical exponent of the localization length is estimated . The values of the critical sheet resistance and are accordant to those of the (less than k and , respectively). We suggest that -FeTaSe is classified as the chiral unitary class, not as standard unitary class.

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