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Linear polarization angle, , dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, , in high mobility GaAs/AlGaAs 2D electron devices have shown a dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, . Here, we suggest a microwave frequency dependence of using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

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