Structure of Velocity Distribution of Sheath-Accelerated Secondary Electrons in Asymmetric RF-DC Discharge

The ballistic population is thought to be responsible for alleviating the electron shading effect and the notching of the photoresist layer. We have performed test-particle simulations where the features in the EVDF of electrons impacting the RF electrode are fully resolved at all energies. An analytic model has been developed to predict existence of peaked and step-like structures in the EVDF.