Non-Resonant Thermal Admittance Spectroscopy

Thermal Admittance Spectroscopy (TAS) as become a popular technique to determine trap state density and energetic position in semiconductors. In the limit of a large number of trap states ($>{10}^{16}{\text{cm}}^{-3}$), Fermi-level pinning undermines the assumptions used in the analysis of TAS data, which leads to a significant underestimation of the trap state density. Here, we develop the tools to detect and account for the occurrence of Fermi-level pinning in TAS measurements.