Strain induced metal-insulator transition in ultrathin films of SrRuO${}_3$

The ultrathin film limit has been shown to be a rich playground for unusual low dimensional physics. Taking the example of SrRuO${}_3$ which is ferromagnetic and metallic at the bulk limit, one finds that it becomes antiferromagnetic and insulating at the three monolayers limit when grown on SrTiO${}_3$. The origin of the insulating state is traced to strongly orbital dependent exchange splittings. A modest compressive strain of 1% of the SrTiO${}_3$ substrate is then found to drive the system into a highly confined two-dimensional 100% spin polarized metallic state. This metal-insulator transition driven by a modest strain could be useful in two state device applications.