Photoluminescence of focused ion beam implanted Er${}^{3+}$:Y${}_2$SiO${}_5$ crystals

Erbium doped low symmetry Y${}_2$SiO${}_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er${}^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er${}^{3+}$:Y${}_2$SiO${}_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.