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We present a detailed characterization of a new generation of athermal-phonon single-charge sensitive Si HVeV detectors, the best of which achieved 612 meV 4 meV baseline resolution. Our sub-eV energy resolution enables precise measurements of single-photon events and reveal consistent energy losses of 0.81 eV 0.03 eV per charge excitation across two facilities. We demonstrate that the noise for these detectors is well described using a standard Transition Edge Sensor noise model. We also place upper bounds on the nominal phonon collection efficiency of 45%, establishing these detectors as the most efficient athermal phonon detectors to date, limited only by intrinsic limitations of quasiparticle generation.

生成讲解博客的中文版本

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