Interplay of growth mode and thermally induced spin accumulation in epitaxial Al/Co${}_2$TiSi/Al and Al/Co${}_2$TiGe/Al contacts

The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of {\em ab initio} calculations of the thermodynamic equilibrium and electronic transport. We have focused on two main issues and found that: (i) the interface between Al and the closely lattice-matched Heusler alloys of type Co${}_2$Ti$Z$ ($Z=$ Si or Ge) is stable under various growth conditions; and (ii) the conventional and spin-dependent Seebeck coefficients in such heterojunctions exhibit a strong dependence on both the spacer and the atomic composition of the Al/Heusler interface. The latter quantity gives a measure of the spin accumulation and varies between $+8$~$\mu$V/K and $-3$~$\mu$V/K near $300$~K, depending on whether a Ti-Ge or a Co-Co plane makes the contact between Al and Co${}_2$TiGe in the trilayer. Our results show that it is in principle possible to tailor the spin-caloric effects by a targeted growth control of the samples.