Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

We report the growth of InAs${}_{1-x}$Sb${}_x$ nanowires ($0\le x\le 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs${}_{1-x}$Sb${}_x$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs${}_{0.85}$Sb${}_{0.15}$ nanowires than InAs nanowires.