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We study deep trapping states in Ce3±doped garnet crystals with the composition (Lu,Y,Gd)3(Ga,Al)5O12, recently shown as having remarkably high light yield. We use thermally stimulated luminescence (TSL) technique above room temperature and determine the composition Gd3Ga3Al2O12 as the host showing the lowest concentration of traps. This host consistently manifest very low afterglow comparable to that of the standard BGO crystal. We also perform TSL glow peak analysis based on the initial rise technique to evaluate trap depth and other characteristics associated with TSL peaks.

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