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2012-10-11
On melting of silicon carbide under pressure
Petr S. SokolovVladimir A. MukhanovThierry ChauveauVladimir L. Solozhenko
文献摘要
The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.
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