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Polarization resolved, Raman scattering response due to E phonon in monolayer graphene has been investigated in magnetic fields up to 29 T. The hybridization of the E phonon with only the fundamental inter Landau level excitation (involving the n=0 Landau level) is observed and only in one of the two configurations of the circularly crossed polarized excitation and scattered light. This polarization anisotropy of the magneto-phonon resonance is shown to be inherent to relatively strongly doped graphene samples, with carrier concentration typical for graphene deposited on SiO.

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