Engineering a spin-fet: spin-orbit phenomena and spin transport induced by a gate electric field

In this work, we show that a gate electric field, applied in the base of the field-effect devices, leads to inducing spin-orbit interactions (Rashba and linear Dresselhauss) and confines the transport electrons in a two-dimensional electron gas. On the basis of these phenomena we solve analytically the Pauli equation when the Rashba strength and the linear Dresselhaus one are equal, for a tuning value of the gate electric field ${\mathcal{E}}_g^{\ast }$. Using the transfer matrix approach, we provide a joint description of the transport by varying the bias electric field, ${\mathcal{E}}_b$. We can flip the spin of the incident electrons, or block the spin-down completely. The robustness of this behavior is proved when ${\mathcal{E}}_g^{\ast }$ changes by $$\mathcal{E}$_g^* \pm \delta $\mathcal{E}$_g$.