Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl

The anomalous Hall effect (AHE) in the Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $ρ_{x x}$ as well as the anomalous Hall resistivity $ρ_{a h e}$ . Analyzing the scaling behavior of $ρ_{a h e}$ in terms of $ρ_{x x}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.

Anomalous Hall effect in the Co-based Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl

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Anomalous Hall effect in the Co-based Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl

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Anomalous Hall effect in the Co-based Heusler compounds Co22​FeSi and Co22​FeAl

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Anomalous Hall effect in the Co-based Heusler compounds Co22​FeSi and Co22​FeAl

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Anomalous Hall effect in the Co-based Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl

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Anomalous Hall effect in the Co-based Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl

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AI智能校验