Growth of atomically smooth thin films of the electronically phase separated manganite (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$

Atomically flat, epitaxial, and stoichiometric thin films of the electronically phase separated compound (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$ were grown on as-received and treated NdGaO $_{3}$ substrates by fine tuning of oxygen pressure during deposition. Optimal thin films with step flow growth mode show superior physical properties compared to thin films grown in off-optimal oxygen pressures, {\em viz.} the highest maximum temperature coefficient of resistance, the highest peak-resistivity temperature, and reduced coercive fields. Transport, magnetization, and x-ray diffraction measurements indicate that the oxygen pressure during growth plays a critical role in the formation of oxygen vacancies, cation vacancies, and grain boundaries.

Growth of atomically smooth thin films of the electronically phase separated manganite (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$

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Growth of atomically smooth thin films of the electronically phase separated manganite (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$

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Growth of atomically smooth thin films of the electronically phase separated manganite (La0.50.5​Pr0.50.5​)0.670.67​Ca0.330.33​MnO33​

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Growth of atomically smooth thin films of the electronically phase separated manganite (La0.50.5​Pr0.50.5​)0.670.67​Ca0.330.33​MnO33​

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Growth of atomically smooth thin films of the electronically phase separated manganite (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$

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Growth of atomically smooth thin films of the electronically phase separated manganite (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$

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AI智能校验