加载中…
2011-08-18
Non-volatile Complementary Resistive Switch-based Content Addressable Memory
Omid KaveheiSaid Al-SarawiSharath SriramMadhu BhaskaranKyoung-Rok ChoKamran EshraghianDerek Abbott
文献摘要
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logicON state transition that enables this novel CRS application.
讨论
0讲解博客
生成讲解博客的中文版本
AI智能校验
生成AI智能校验的中文版本