Reentrant spin-glass behavior in $TlFe_{2-x}Se_2$ with the $ThCr_2Si_2$-type structure

We investigated the physical properties of $T l F e_{2 - x} S e_{2}$ single crystals. The resistivity of $T l F e_{2 - x} S e_{2}$ shows typical semiconductor behavior with an activation energy of 25 meV. DC susceptibility indicates an antiferromagnetic transition at about 450 K. Reentrant spin-glass (RSG) behavior was found at about 130 K through DC and AC magnetic measurements. The RSG behavior suggests the existence of a strong competition between ferromagnetic (FM) and antiferromagnetic (AFM) interactions due to Fe deficiencies. Strong electron-electron correlation may exist in this material and it is possibly a candidate of parent compound for high $T_{c}$ superconductors.

Reentrant spin-glass behavior in $T l F e_{2 - x} S e_{2}$ with the $T h C r_{2} S i_{2}$ -type structure

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Reentrant spin-glass behavior in $T l F e_{2 - x} S e_{2}$ with the $T h C r_{2} S i_{2}$ -type structure

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Reentrant spin-glass behavior in TlFe2−xSe2TlFe2−x​Se2​ with the ThCr2Si2ThCr2​Si2​-type structure

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Reentrant spin-glass behavior in TlFe2−xSe2TlFe2−x​Se2​ with the ThCr2Si2ThCr2​Si2​-type structure

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Reentrant spin-glass behavior in $T l F e_{2 - x} S e_{2}$ with the $T h C r_{2} S i_{2}$ -type structure

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Reentrant spin-glass behavior in $T l F e_{2 - x} S e_{2}$ with the $T h C r_{2} S i_{2}$ -type structure

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