Distortion of charge distribution due to internal electric fields described by the drift-diffusion semiconductor model

In this paper, the initial value problem for the Debye–Hueckel drift-diffusion equation is studied. This equation was introduced as a model describing plasma behavior and is also known as a simulation model of MOSFET, and so its solution describes charge density. It is well-known that, if the initial density is localized, then the density is adjusted to be radially symmetric due to the linear diffusion. Consequently, the electric field is also governed by a radially symmetric potential, and its effects are expected to act radially symmetrically. The main result express the electric field and its effect on the charge density as concrete functions. It also denotes the distortion of symmetry and the shift of scale on the density due to the internal electric field. Unlike the historical paper via Escobedo and Zuazua and the followers, the main result captures stronger nonlinearity than the logarithmic shift.