Strong reduction of field-dependent microwave surface resistance in YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ with sub-micrometric BaZrO$_3$ inclusions

We observe a strong reduction of the field induced thin film surface resistance measured at high microwave frequency ( $ν =$ 47.7 GHz) in YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ thin films grown on SrTiO $_{3}$ substrates, as a consequence of the introduction of sub-micrometric BaZrO $_{3}$ particles. The field increase of the surface resistance is smaller by a factor of $\sim$ 3 in the film with BaZrO $_{3}$ inclusions, while the zero-field properties are not much affected. Combining surface resistance and surface reactance data we conclude (a) that BaZrO $_{3}$ inclusions determine very deep and steep pinning wells and (b) that the pinning changes nature with respect to the pure film.

Strong reduction of field-dependent microwave surface resistance in YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ with sub-micrometric BaZrO $_{3}$ inclusions

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Strong reduction of field-dependent microwave surface resistance in YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ with sub-micrometric BaZrO $_{3}$ inclusions

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Strong reduction of field-dependent microwave surface resistance in YBa22​Cu33​O7−δ7−δ​ with sub-micrometric BaZrO33​ inclusions

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Strong reduction of field-dependent microwave surface resistance in YBa22​Cu33​O7−δ7−δ​ with sub-micrometric BaZrO33​ inclusions

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Strong reduction of field-dependent microwave surface resistance in YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ with sub-micrometric BaZrO $_{3}$ inclusions

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Strong reduction of field-dependent microwave surface resistance in YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ with sub-micrometric BaZrO $_{3}$ inclusions

讲解博客

AI智能校验