Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As${}_2$ molecules was introduced to the system by thermal decomposition of polycrystalline GaAs to control the stoichiometry and shape of the nanowires during growth. GaAs nanowires exhibit a variety of geometries under varying arsenic over pressure, which can be understood by different growth processes via vapor-liquid-solid mechanism. Single-crystal GaAs nanowires with uniform diameter, lengths over 20 $\mu$m, and thin surface oxide layer were obtained and can potentially be used for further electronic characterization.