Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs

Gain layer doping concentration determines the electric field profile in a low gain avalanche detector (LGAD) and is therefore the primary design parameter. This work reports its influence on the charge collection and timing behavior of 4H-SiC LGADs. Two mesa-isolated devices with cold He ion implanted termination differ only in gain layer doping, $4\times {10}^{17}$~$c{m}^{-3}$ and $5\times {10}^{17}$~$c{m}^{-3}$, and are characterized together with a PIN diode from the same wafer using the ultraviolet transient current technique (UV-TCT). The 25% doping difference produces a gain difference of about two orders of magnitude at the same applied bias, representing a gain range of 3.7 to 216. Under UV-TCT excitation, the higher-doped device exhibits time-resolution minima within a gain range of about 20–80 across the investigated laser intensities, consistent with the transition from electronic-noise-dominated jitter to multiplication shot noise. The non-monotonic timing response is also observed under a ${}^{90}Sr$ beta source with a Si LGAD reference: the higher-doped device reaches 51.7 ps at 280 V and then degrades, while the lower-doped device requires more than 450 V. This measured gain window provides an experimental reference for further optimization of the gain-layer design.