Pomeranchuk-like electronic localization above 100 K in twisted MoS${}_2$

Twisted transition-metal dichalcogenides (TMDs) have manifested a rich variety of emerging physical phenomena, yet experimental studies have so far been largely limited in their valence bands (p-doped). Here, we show correlated electronic states in the conduction bands (n-doped) of near-AA-twisted bilayer MoS${}_2$ with twist angles ranging from $\sim {2.3}^{\circ }$ to $\sim {3.5}^{\circ }$, down to the mK temperature regime. A strongly reconstructed correlated phase diagram as a function of twist-angle has been observed - correlated gaps persist to temperatures approaching $160$ K at small twist angles, but collapse to only $\sim 20$ K at intermediate angles, where a richer landscape of interaction-driven states emerges. At the largest twist-angle $\sim 3.5{}^{\circ }$, correlated resistance at 1 electron per moiré unit cell is enhanced upon heating, consistent with thermally assisted localization, or, a Pomeranchuk-like behaviour. Its magnetic-field response, however, is highly anisotropic, which differs markedly from that of canonical isospin moiré Pomeranchuk effect in graphene systems. Strikingly, such signature can persist even above 100 K around a filling of 2 electrons per moiré, despite of its weak resistive nature. Our results establish the twisted MoS${}_2$ as a platform for studying the complexity of charge localization, internal flavour degrees of freedom, and band topology in conduction bands of semiconducting moiré systems.